GeneSiC Semiconductor G3R160MT12J

Package / Case

QFN

Mounting Type

Surface Mount

Supplier Device Package

TO-263-7

Standard Frequency

50

Operating Temp Range

-20C to 70C

Operating Supply Voltage (Max)

2.75(V)

Operating Supply Voltage (Min)

2.25(V)

Programmable

No

Continuous Drain Current Id

22A

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

11 ns

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

110 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 15 V

Unit Weight

0.056438 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

SMD/SMT

Forward Transconductance - Min

4.4 S

Channel Mode

Enhancement

Manufacturer

GeneSiC Semiconductor

Brand

GeneSiC Semiconductor

Qg - Gate Charge

23 nC

Rds On - Drain-Source Resistance

160 mOhms

RoHS

Details

Typical Turn-Off Delay Time

10 ns

Id - Continuous Drain Current

19 A

Package

Tube

Base Product Number

G3R160

Current - Continuous Drain (Id) @ 25℃

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Mfr

GeneSiC Semiconductor

Power Dissipation (Max)

128W (Tc)

Product Status

Active

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Bulk

Series

G3R

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 175°C (TJ)

Type

CLOCK OSCILLATOR

Subcategory

MOSFETs

Technology

SiC

Frequency Stability

the variation of output frequency of a crystal oscillator due to external conditions like temperature variation, voltage variation, output load variation, and frequency aging.

±10(ppm)

Symmetry-Max

55(%)

Configuration

Single

Number of Channels

1 Channel

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

128W

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

208mOhm @ 10A, 15V

Vgs(th) (Max) @ Id

2.7V @ 5mA (Typ)

Input Capacitance (Ciss) (Max) @ Vds

724 pF @ 800 V

Gate Charge (Qg) (Max) @ Vgs

23 nC @ 15 V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

9 ns

Drain to Source Voltage (Vdss)

1200 V

Vgs (Max)

+20V, -10V

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

Transistor Type

MOSFET

Channel Type

N Channel

FET Feature

-

Product

MOSFET

Product Category

a particular group of related products.

MOSFET