Fairchild Semiconductor IRFS820B

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

NO

Supplier Device Package

TO-220F-3

Number of Terminals

3

Transistor Element Material

SILICON

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

2.5A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

10V

Mfr

Fairchild Semiconductor

Power Dissipation (Max)

33W (Tc)

Product Status

Active

Package Description

TO-220F, 3 PIN

Package Style

FLANGE MOUNT

Moisture Sensitivity Levels

NOT APPLICABLE

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

NOT APPLICABLE

Rohs Code

Yes

Manufacturer Part Number

IRFS820B

Package Shape

RECTANGULAR

Manufacturer

Rochester Electronics LLC

Number of Elements

1

Part Life Cycle Code

Active

Ihs Manufacturer

ROCHESTER ELECTRONICS LLC

Risk Rank

5.19

Part Package Code

TO-220F

Drain Current-Max (ID)

2.5 A

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

Series

-

JESD-609 Code

e3

Pbfree Code

Yes

Terminal Finish

MATTE TIN

Technology

MOSFET (Metal Oxide)

Terminal Position

SINGLE

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

THROUGH-HOLE

Peak Reflow Temperature (Cel)

NOT APPLICABLE

Reach Compliance Code

unknown

Pin Count

a count of all of the component leads (or pins)

3

JESD-30 Code

R-PSFM-T3

Qualification Status

An indicator of formal certification of qualifications.

COMMERCIAL

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Case Connection

ISOLATED

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

2.6Ohm @ 1.25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

610 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs

18 nC @ 10 V

Drain to Source Voltage (Vdss)

500 V

Vgs (Max)

±30V

Polarity/Channel Type

N-CHANNEL

Drain-source On Resistance-Max

2.6 Ω

Pulsed Drain Current-Max (IDM)

8 A

DS Breakdown Voltage-Min

500 V

Avalanche Energy Rating (Eas)

200 mJ

FET Technology

METAL-OXIDE SEMICONDUCTOR

FET Feature

-