FDN338P_NL

Fairchild Semiconductor FDN338P_NL

Part No:

FDN338P_NL

Datasheet:

-

Package:

-

AINNX NO:

29580699-FDN338P_NL

Description:

Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Package Description
    SMALL OUTLINE, R-PDSO-G3
  • Package Style
    SMALL OUTLINE
  • Moisture Sensitivity Levels
    1
  • Package Body Material
    PLASTIC/EPOXY
  • Manufacturer Package Code
    SUPERSOT
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Temperature-Max
    150 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    FDN338P_NL
  • Package Shape
    RECTANGULAR
  • Manufacturer
    Fairchild Semiconductor Corporation
  • Number of Elements
    1
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    FAIRCHILD SEMICONDUCTOR CORP
  • Risk Rank
    5.3
  • Part Package Code
    SOT
  • Drain Current-Max (ID)
    1.6 A
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOGIC LEVEL COMPATIBLE
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    P-CHANNEL
  • Drain Current-Max (Abs) (ID)
    1.6 A
  • Drain-source On Resistance-Max
    0.115 Ω
  • DS Breakdown Voltage-Min
    20 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    0.5 W
0 Similar Products Remaining