DS1350WP-100

Analog Devices DS1350WP-100

Part No:

DS1350WP-100

Manufacturer:

Analog Devices

Datasheet:

Package:

0805 (2012 Metric)

AINNX NO:

40303214-DS1350WP-100

Category:

Memory

Description:

Ram Nv 4MEG 3.3V Bm Pcap 100NS

Products specifications
  • Lifecycle Status
    Production (Last Updated: 1 month ago)
  • Package / Case
    0805 (2012 Metric)
  • Mounting Type
    Surface Mount
  • Number of Pins
    34
  • Supplier Device Package
    0805
  • Package
    Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
  • Base Product Number
    RN73R2A
  • Mfr
    KOA Speer Electronics, Inc.
  • Product Status
    Active
  • Manufacturer Lifecycle Status
    PRODUCTION (Last Updated: 1 month ago)
  • RoHS
    Compliant
  • Memory Types
    Non-Volatile, RAM, SRAM
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 70 C
  • Supply Voltage-Max
    3.6 V
  • Minimum Operating Temperature
    0 C
  • Supply Voltage-Min
    3 V
  • Interface Type
    Parallel
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 155°C
  • Series
    RN73R
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Size / Dimension
    0.079 L x 0.049 W (2.00mm x 1.25mm)
  • Tolerance
    ±0.5%
  • Number of Terminations
    2
  • Temperature Coefficient

    The resistance-change factor per degree Celsius of temperature change is called the temperature coefficient of resistance. This factor is represented by the Greek lower-case letter “alpha” (α). A positive coefficient for a material means that its resistance increases with an increase in temperature.

    ±50ppm/°C
  • Resistance
    820 kOhms
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    70 °C
  • Min Operating Temperature
    -40 °C
  • Composition
    Thin Film
  • Power (Watts)
    0.125W, 1/8W
  • Technology
    NVSRAM (Non-Volatile SRAM)
  • Voltage - Supply
    3V ~ 3.6V
  • Frequency
    100 GHz
  • Operating Supply Voltage

    The voltage level by which an electrical system is designated and to which certain operating characteristics of the system are related.

    3.3 V
  • Failure Rate

    the frequency with which an engineered system or component fails, expressed in failures per unit of time. It is usually denoted by the Greek letter λ (lambda) and is often used in reliability engineering.

    -
  • Interface
    Parallel
  • Max Supply Voltage

    In general, the absolute maximum common-mode voltage is VEE-0.3V and VCC+0.3V, but for products without a protection element at the VCC side, voltages up to the absolute maximum rated supply voltage (i.e. VEE+36V) can be supplied, regardless of supply voltage.

    3.6 V
  • Min Supply Voltage

    The minimum supply voltage (V min ) is explored for sequential logic circuits by statistically simulating the impact of within-die process variations and gate-dielectric soft breakdown on data retention and hold time.

    3 V
  • Memory Size

    The memory capacity is the amount of data a device can store at any given time in its memory.

    512 kB
  • Operating Supply Current
    50 mA
  • Access Time
    100 ns
  • Memory Format
    NVSRAM
  • Memory Interface

    An external memory interface is a bus protocol for communication from an integrated circuit, such as a microprocessor, to an external memory device located on a circuit board.

    Parallel
  • Data Bus Width
    8 b
  • Organization
    512 k x 8
  • Write Cycle Time - Word, Page
    100ns
  • Density
    4 Mb
  • Features
    Automotive AEC-Q200, Moisture Resistant
  • Memory Organization
    512K x 8
  • Height Seated (Max)
    0.024 (0.60mm)
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • Lead Free
    Lead Free
  • Ratings
    AEC-Q200
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