BLP0427M9S20G

Ampleon BLP0427M9S20G

Part No:

BLP0427M9S20G

Manufacturer:

Ampleon

Package:

-

AINNX NO:

68725148-BLP0427M9S20G

Description:

Description: RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-Oxide Semiconductor FET,

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Type of connector
    pin strips
  • Connector
    socket
  • Kind of connector
    female
  • Spatial orientation
    straight
  • Contacts pitch
    2.54mm
  • Electrical mounting
    THT
  • Connector pinout layout
    1x40
  • Part Life Cycle Code
    Contact Manufacturer
  • Ihs Manufacturer
    AMPLEON NETHERLANDS B V
  • Package Description
    SMALL OUTLINE, R-PDSO-G2
  • Operating Temperature-Max
    225 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • ECCN Code
    EAR99
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reach Compliance Code
    unknown
  • Reference Standard
    IEC-60134
  • JESD-30 Code
    R-PDSO-G2
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    65 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Highest Frequency Band
    S BAND
  • Profile
    beryllium copper
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