BLF888B

Ampleon BLF888B

Part No:

BLF888B

Manufacturer:

Ampleon

Package:

-

AINNX NO:

68730221-BLF888B

Description:

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    2
  • Part Life Cycle Code
    Contact Manufacturer
  • Ihs Manufacturer
    AMPLEON NETHERLANDS B V
  • Package Description
    FLANGE MOUNT, R-CDFM-F4
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • ECCN Code
    EAR99
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-CDFM-F4
  • Configuration
    COMMON SOURCE, 2 ELEMENTS
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    104 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY BAND
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