Allegro MicroSystems EKI06075

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.5

Maximum Continuous Drain Current (A)

78

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

100

Maximum Drain Source Resistance (MOhm)

6.6@10V

Typical Gate Charge @ Vgs (nC)

[email protected]|57.2@10V

Typical Gate Charge @ 10V (nC)

57.2

Typical Input Capacitance @ Vds (pF)

3810@25V

Maximum Power Dissipation (mW)

116000

Typical Fall Time (ns)

15.7

Typical Rise Time (ns)

7.4

Typical Turn-Off Delay Time (ns)

32

Typical Turn-On Delay Time (ns)

6.6

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

EU RoHS

Compliant with Exemption

ECCN (US)

EAR99

Category

Power MOSFET

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

NRND

Configuration

Single Dual Drain

Channel Type

N