Maximum Power Dissipation (mW)
3100
Typical Input Capacitance @ Vds (pF)
2410@25V
Typical Gate Charge @ 10V (nC)
35
Typical Gate Charge @ Vgs (nC)
Maximum Drain Source Resistance (MOhm)
5.4@10V
Maximum IDSS (uA)
100
Maximum Gate Source Leakage Current (nA)
100
Maximum Continuous Drain Current (A)
14
Maximum Gate Threshold Voltage (V)
2.5
Maximum Gate Source Voltage (V)
±20
Maximum Drain Source Voltage (V)
40
Number of Elements per Chip
1
Channel Mode
Enhancement
Process Technology
TMOS
Category
Power MOSFET
ECCN (US)
EAR99
EU RoHS
Compliant with Exemption
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Typical Turn-On Delay Time (ns)
4.1
Typical Turn-Off Delay Time (ns)
19.7
Typical Rise Time (ns)
5.6
Typical Fall Time (ns)
11.9
Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Active
Configuration
Single Quad Drain Triple Source
Channel Type
N