MRF5812LF

Advanced MRF5812LF

Part No:

MRF5812LF

Manufacturer:

Advanced

Datasheet:

-

Package:

SOIC-8

AINNX NO:

44429821-MRF5812LF

Description:

RF Bipolar Transistors RF Transistor

Products specifications
  • Package / Case
    SOIC-8
  • Number of Pins
    7
  • RoHS
    Compliant
  • Emitter- Base Voltage VEBO
    2.5 V
  • Pd - Power Dissipation
    1.25 W
  • Transistor Polarity
    NPN
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 200 C
  • DC Collector/Base Gain hfe Min
    50
  • Unit Weight
    0.019048 oz
  • Minimum Operating Temperature
    - 65 C
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Mounting Styles
    SMD/SMT
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Brand
    Advanced Semiconductor, Inc.
  • Collector- Emitter Voltage VCEO Max
    15 V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Series
    MRF5812LF
  • Termination
    IDT
  • Connector Type
    Connector, IDC
  • Type
    RF Bipolar Small Signal
  • Gender
    Male
  • Subcategory
    Transistors
  • Technology
    Si
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    1 GHz
  • Wire/Cable Type
    Flat Flex
  • Cable Length

    A nautical unit of measure equal to one tenth of a nautical mile or approximately 1 fathoms.

    203 mm
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    RF Bipolar Transistors
  • Transistor Type
    Bipolar
  • Continuous Collector Current
    200 mA
  • Product Category

    a particular group of related products.

    RF Bipolar Transistors
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
0 Similar Products Remaining