MRF587

Advanced MRF587

Part No:

MRF587

Manufacturer:

Advanced

Datasheet:

-

Package:

Case244-04

AINNX NO:

48549961-MRF587

Description:

RF Bipolar Transistors RF Transistor

Products specifications
  • Package / Case
    Case244-04
  • RoHS
    Details
  • Collector- Emitter Voltage VCEO Max
    17 V
  • Emitter- Base Voltage VEBO
    2.5 V
  • Pd - Power Dissipation
    5 W
  • Transistor Polarity
    NPN
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 200 C
  • DC Collector/Base Gain hfe Min
    50
  • Unit Weight
    0.429323 oz
  • Minimum Operating Temperature
    - 65 C
  • Mounting Styles
    Through Hole
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Brand
    Advanced Semiconductor, Inc.
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tray
  • Type
    RF Bipolar Power
  • Subcategory
    Transistors
  • Technology
    Si
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    500 MHz
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    RF Bipolar Transistors
  • Transistor Type
    Bipolar Power
  • Continuous Collector Current
    200 mA
  • Product Category

    a particular group of related products.

    RF Bipolar Transistors
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