MRF141

Advanced MRF141

Part No:

MRF141

Manufacturer:

Advanced

Datasheet:

-

Package:

221-11-3

AINNX NO:

48549898-MRF141

Description:

RF MOSFET Transistors RF Transistor

Products specifications
  • Package / Case
    221-11-3
  • Id - Continuous Drain Current
    16 A
  • Vds - Drain-Source Breakdown Voltage
    65 V
  • Vgs th - Gate-Source Threshold Voltage
    5 V
  • Pd - Power Dissipation
    300 W
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 200 C
  • Vgs - Gate-Source Voltage
    40 V
  • Minimum Operating Temperature
    - 65 C
  • Mounting Styles
    SMD/SMT
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Brand
    Advanced Semiconductor, Inc.
  • RoHS
    Details
  • Rds On - Drain-Source Resistance
    5 mOhms
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tray
  • Subcategory
    MOSFETs
  • Technology
    Si
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    175 MHz
  • Configuration
    Single
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    150 W
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    RF MOSFET Transistors
  • Gain
    20 dB
  • Product Category

    a particular group of related products.

    RF MOSFET Transistors
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