Advanced BLV33

Mounting Type

Stud Mount

Package / Case

DO-203AB, DO-5, Stud

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

NO

Supplier Device Package

DO-5

Number of Terminals

4

Transistor Element Material

SILICON

Package

Bulk

Mfr

Microchip Technology

Product Status

Active

Emitter- Base Voltage VEBO

4 V

Pd - Power Dissipation

132 W

Transistor Polarity

NPN

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 200 C

DC Collector/Base Gain hfe Min

15

Minimum Operating Temperature

- 65 C

Mounting Styles

Through Hole

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

Maximum DC Collector Current

20 A

RoHS

Details

Collector- Emitter Voltage VCEO Max

33 V

Risk Rank

5.09

Ihs Manufacturer

ASI SEMICONDUCTOR INC

Part Life Cycle Code

Active

Package Shape

ROUND

Manufacturer Part Number

BLV33

Transition Frequency-Nom (fT)

750 MHz

Operating Temperature-Max

200 °C

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Package Style

POST/STUD MOUNT

Package Description

POST/STUD MOUNT, O-CRPM-F4

Series

-

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tray

ECCN Code

EAR99

Type

RF Bipolar Power

Subcategory

Transistors

Technology

Standard

Terminal Position

RADIAL

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

FLAT

Reach Compliance Code

unknown

JESD-30 Code

O-CRPM-F4

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Operating Frequency

Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

224 MHz

Configuration

Single

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Voltage - Forward (Vf) (Max) @ If

975 mV @ 70 A

Operating Temperature - Junction

175°C (Max)

Transistor Application

AMPLIFIER

Voltage - DC Reverse (Vr) (Max)

100 V

Current - Average Rectified (Io)

70A

Polarity/Channel Type

NPN

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

RF Bipolar Transistors

Transistor Type

Bipolar Power

Capacitance @ Vr, F

300pF @ 10V, 1MHz

Power Dissipation-Max (Abs)

132 W

Collector Current-Max (IC)

12.5 A

DC Current Gain-Min (hFE)

15

Continuous Collector Current

12.5 A

Collector-Emitter Voltage-Max

33 V

Highest Frequency Band

VERY HIGH FREQUENCY BAND

Reverse Recovery Time (trr)

50 ns

Product Category

a particular group of related products.

RF Bipolar Transistors