AT45DB041E-DWF

Adesto Technologies AT45DB041E-DWF

Part No:

AT45DB041E-DWF

Manufacturer:

Adesto Technologies

Datasheet:

-

Package:

-

AINNX NO:

32741323-AT45DB041E-DWF

Description:

Flash Serial-SPI 4Mbit 4M x 1bit DIE

Products specifications
  • Factory Lead Time
    8 Weeks
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    8
  • Manufacturer Part Number
    AT45DB041E-DWF
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    ADESTO TECHNOLOGIES CORP
  • Package Description
    DIE,
  • Risk Rank
    5.73
  • Clock Frequency-Max (fCLK)
    85 MHz
  • Number of Words
    4194304 words
  • Number of Words Code
    4000000
  • Operating Temperature-Max
    85 °C
  • Operating Temperature-Min
    -40 °C
  • Package Body Material
    UNSPECIFIED
  • Package Code
    DIE
  • Package Shape
    RECTANGULAR
  • Package Style
    UNCASED CHIP
  • Supply Voltage-Nom (Vsup)
    1.8 V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Terminal Position
    UPPER
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Number of Functions
    1
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    R-XUUC-N8
  • Supply Voltage-Max (Vsup)
    3.6 V
  • Temperature Grade

    Temperature grades represent a tire's resistance to heat and its ability to dissipate heat when tested under controlled laboratory test conditions.

    INDUSTRIAL
  • Supply Voltage-Min (Vsup)
    1.65 V
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    SYNCHRONOUS
  • Organization
    4MX1
  • Memory Width
    1
  • Memory Density
    4194304 bit
  • Parallel/Serial
    SERIAL
  • Memory IC Type
    FLASH
  • Programming Voltage

    A special high-voltage supply that supplies the potential and energy for altering the state of certain nonvolatile memory arrays. On some devices, the presence of VPP also acts as a program enable signal (P).

    2.7 V
  • Length
    2.518 mm
  • Width
    1.418 mm
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