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Transistors - Special Purpose

16 Results

  • Manufacturer+1

  • ECCN Code

  • FET Technology

  • Ihs Manufacturer

  • Package Description

  • Part Life Cycle Code

  • Polarity/Channel Type

  • Reach Compliance Code

  • JESD-30 Code

  • Operating Mode

  • Package Body Material

  • Package Shape

  • Package Style

  • SP2030
    SP2030

    Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

    manufacturer: RF Micro Devices Inc

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SLD3091FZ
    SLD3091FZ

    Description: Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, CERAMIC, LDMOS-3

    manufacturer: RF Micro Devices Inc

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FPD7612
    FPD7612

    RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE

    manufacturer: RF Micro Devices Inc

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FPD1500SOT89
    FPD1500SOT89

    RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN

    manufacturer: RF Micro Devices Inc

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FPD3000
    FPD3000

    Description: RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE

    manufacturer: RF Micro Devices Inc

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FPD200P70
    FPD200P70

    Description: RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-4

    manufacturer: RF Micro Devices Inc

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SHF-1000
    SHF-1000

    RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC PACKAGE-6

    manufacturer: RF Micro Devices Inc

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FPD750SOT343E
    FPD750SOT343E

    RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC PACKAGE-4

    manufacturer: RF Micro Devices Inc

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SLD-1026Z
    SLD-1026Z

    RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOF-26, 6 PIN

    manufacturer: RF Micro Devices Inc

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FPD2250SOT89
    FPD2250SOT89

    Description: RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN

    manufacturer: RF Micro Devices Inc

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FPD2250SOT89CESR
    FPD2250SOT89CESR

    RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PACKAGE-3

    manufacturer: RF Micro Devices Inc

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FPD1050
    FPD1050

    RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE

    manufacturer: RF Micro Devices Inc

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • SPF-2086
    SPF-2086

    Description: RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

    manufacturer: RF Micro Devices Inc

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • RF7846TR13
    RF7846TR13

    -

    manufacturer: RF Micro Devices Inc

    • Inventory125
    • MOQ1
    • SPQ1
  • SPF-2000
    SPF-2000

    Description: RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

    manufacturer: RF Micro Devices Inc

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FPD3000SOT89
    FPD3000SOT89

    RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN

    manufacturer: RF Micro Devices Inc

    • InventoryIn Stock
    • MOQ1
    • SPQ1