DGW75N65CTL1

Yangzhou Yangjie Electronics Co Ltd DGW75N65CTL1

Part No:

DGW75N65CTL1

Datasheet:

Package:

-

AINNX NO:

69151236-DGW75N65CTL1

Description:

Insulated Gate Bipolar Transistor, 85A I(C), 650V V(BR)CES, N-Channel, TO-247AB,

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    YANGZHOU YANGJIE ELECTRONICS CO LTD
  • Number of Elements
    1
  • Operating Temperature-Max
    175 °C
  • Operating Temperature-Min
    -40 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • Turn-off Time-Nom (toff)
    509 ns
  • Turn-on Time-Nom (ton)
    168 ns
  • ECCN Code
    EAR99
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    R-PSFM-T3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-247AB
  • Power Dissipation-Max (Abs)
    395 W
  • Collector Current-Max (IC)
    85 A
  • Collector-Emitter Voltage-Max
    650 V
  • Gate-Emitter Voltage-Max
    30 V
  • VCEsat-Max
    1.95 V
  • Gate-Emitter Thr Voltage-Max
    5.85 V
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