WeEn Semiconductors WNSC2M1K0170WQ

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Voltage, Rating

25 V

Package

Bulk

Base Product Number

WNSC2

Current - Continuous Drain (Id) @ 25℃

7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

Mfr

WeEn Semiconductors

Power Dissipation (Max)

79W (Ta)

Product Status

Active

Factory Pack QuantityFactory Pack Quantity

240

Part # Aliases

934073006127

Manufacturer

WeEn Semiconductors

Brand

WeEn Semiconductors

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 175°C (TJ)

Series

-

Tolerance

0.1 %

Temperature Coefficient

The resistance-change factor per degree Celsius of temperature change is called the temperature coefficient of resistance. This factor is represented by the Greek lower-case letter “alpha” (α). A positive coefficient for a material means that its resistance increases with an increase in temperature.

25 ppm/°C

Resistance

2.67 kΩ

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

155 °C

Min Operating Temperature

-55 °C

Composition

Thin Film

Subcategory

MOSFETs

Power Rating

63 mW

Technology

MOSFET (Metal Oxide)

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

1Ohm @ 1A, 18V

Vgs(th) (Max) @ Id

4.2V @ 800µA

Input Capacitance (Ciss) (Max) @ Vds

225 pF @ 1000 V

Gate Charge (Qg) (Max) @ Vgs

12 nC @ 18 V

Drain to Source Voltage (Vdss)

1700 V

Vgs (Max)

+22V, -10V

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

FET Feature

-

Product Category

a particular group of related products.

MOSFET

Height

350 µm