SIP41109DY-T1-E3

Vishay Siliconix SIP41109DY-T1-E3

Part No:

SIP41109DY-T1-E3

Manufacturer:

Vishay Siliconix

Datasheet:

SIP41109,10

Package:

8-SOIC (0.154, 3.90mm Width)

ROHS:

AINNX NO:

3315436-SIP41109DY-T1-E3

Description:

IC DRVR MOSF 1/2BRDG N-CH 8SOIC

Products specifications
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Driver Configuration
    Half-Bridge
  • Logic voltage-VIL, VIH
    1V 4V
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -40°C~125°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • Voltage - Supply
    10.8V~13.2V
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Number of Functions
    1
  • Supply Voltage
    12V
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    SIP41109
  • Pin Count

    a count of all of the component leads (or pins)

    8
  • Input Type
    Non-Inverting
  • Rise / Fall Time (Typ)
    45ns 35ns
  • Channel Type
    Synchronous
  • Number of Drivers
    2
  • Output Peak Current Limit-Nom
    0.2A
  • Gate Type
    N-Channel MOSFET
  • Current - Peak Output (Source, Sink)
    800mA 1A
  • High Side Driver
    YES
  • High Side Voltage - Max (Bootstrap)
    48V
  • Height
    3.18mm
  • Length
    5mm
  • Width
    3.9mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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