VS-GB75YF120N

Vishay Semiconductor Diodes Division VS-GB75YF120N

Part No:

VS-GB75YF120N

Datasheet:

VS-GB75YF120N

Package:

Module

ROHS:

AINNX NO:

6048629-VS-GB75YF120N

Description:

VISHAY VS-GB75YF120N IGBT Array & Module Transistor, NPN, 100 A, 3.8 V, 480 W, 1.2 kV, EconoPACK

Products specifications
  • Factory Lead Time
    18 Weeks
  • Mount
    Chassis Mount, PCB, Screw
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Number of Pins
    35
  • Collector-Emitter Breakdown Voltage
    1.2kV
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C TJ
  • Published
    2013
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Last Time Buy
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    480W
  • Polarity
    NPN
  • Power - Max
    480W
  • Input
    Standard
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    100A
  • Current - Collector Cutoff (Max)
    250μA
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    4.5V @ 15V, 100A
  • NTC Thermistor

    resistors with a negative temperature coefficient, which means that the resistance decreases with increasing temperature.

    No
  • Height
    17mm
  • Length
    107.8mm
  • Width
    45.4mm
  • REACH SVHC
    Unknown
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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