Vishay Semiconductor Diodes Division 1N4148-TAP

Factory Lead Time

11 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

DO-204AH, DO-35, Axial

Number of Pins

2

Supplier Device Package

DO-35

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape & Box (TB)

Published

2014

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

175°C

Min Operating Temperature

-65°C

Capacitance

4pF

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

500mW

Base Part Number

1N4148

Voltage

75V

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Current

3A

Diode Type

Standard

Current - Reverse Leakage @ Vr

25nA @ 20V

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

500mW

Voltage - Forward (Vf) (Max) @ If

1V @ 10mA

Forward Current

Current which flows upon application of forward voltage.

150mA

Max Reverse Leakage Current

5μA

Operating Temperature - Junction

-65°C~150°C

Max Surge Current

Surge current is a peak non repetitive current. Maximum (peak or surge) forward current = IFSM or if(surge), the maximum peak amount of current the diode is able to conduct in forward bias mode.

2A

Voltage - DC Reverse (Vr) (Max)

75V

Current - Average Rectified (Io)

300mA DC

Forward Voltage

the amount of voltage needed to get current to flow across a diode.

1V

Max Reverse Voltage (DC)

75V

Average Rectified Current

Mainly used to characterize alternating voltage and current. It can be computed by averaging the absolute value of a waveform over one full period of the waveform.

300mA

Reverse Recovery Time

8 ns

Peak Reverse Current

The maximum voltage that a diode can withstand in the reverse direction without breaking down or avalanching.If this voltage is exceeded the diode may be destroyed. Diodes must have a peak inverse voltage rating that is higher than the maximum voltage that will be applied to them in a given application.

5μA

Max Repetitive Reverse Voltage (Vrrm)

100V

Capacitance @ Vr, F

4pF @ 0V 1MHz

Peak Non-Repetitive Surge Current

2A

Reverse Voltage

the voltage drop across the diode if the voltage at the cathode is more positive than the voltage at the anode

75V

Max Forward Surge Current (Ifsm)

2A

Recovery Time

8 ns

Max Junction Temperature (Tj)

175°C

Diameter

1.75mm

Height

1.75mm

Length

3.4mm

Width

1.7mm

REACH SVHC

Unknown

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

ROHS3 Compliant

Lead Free

Lead Free