19MT050XF

Vishay Semiconductor Diodes Division 19MT050XF

Part No:

19MT050XF

Datasheet:

19MT050XF

Package:

16-MTP Module

AINNX NO:

6820952-19MT050XF

Description:

MOSFET 4N-CH 500V 31A MTP

Products specifications
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    16-MTP Module
  • Supplier Device Package
    16-MTP
  • Current - Continuous Drain (Id) @ 25℃
    31A
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -40°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Series
    HEXFET®
  • Published
    2003
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -40°C
  • Voltage - Rated DC
    500V
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    1.14kW
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    31A
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    1kW
  • Power - Max
    1140W
  • FET Type
    4 N-Channel (H-Bridge)
  • Rds On (Max) @ Id, Vgs
    220mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id
    6V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7210pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    160nC @ 10V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    165ns
  • Drain to Source Voltage (Vdss)
    500V
  • Continuous Drain Current (ID)
    31A
  • Drain to Source Breakdown Voltage
    500V
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    7.21nF
  • FET Feature
    Standard
  • Rds On Max
    220 mΩ
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    Non-RoHS Compliant
  • Lead Free
    Contains Lead
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