Vishay SMCJ8.0CA-E3/57T

Mount

Surface Mount

Number of Pins

2

Breakdown Voltage / V

8.89 V

Case/Package

SMC

Number of Elements

1

Reverse Stand-off Voltage

8 V

RoHS

Compliant

Schedule B

8541100080, 8541100080|8541100080|8541100080|8541100080|8541100080

Termination

SMD/SMT

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-55 °C

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

1.5 kW

Operating Supply Voltage

The voltage level by which an electrical system is designated and to which certain operating characteristics of the system are related.

8 V

Polarity

Bidirectional

Number of Channels

1

Leakage Current

100 µA

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

1.5 kW

Max Reverse Leakage Current

100 µA

Clamping Voltage

13.6 V

Peak Pulse Current

The peak pulse power rating of a TVS diode is defined as the instantaneous power dissipated by a device for a given pulse condition, and is a measure of the power that is dissipated in the TVS junction during a given transient event.

110.3 A

Max Surge Current

Surge current is a peak non repetitive current. Maximum (peak or surge) forward current = IFSM or if(surge), the maximum peak amount of current the diode is able to conduct in forward bias mode.

110.3 A

Peak Pulse Power

1.5 kW

Direction

Bidirectional

Test Current

1 mA

Reverse Breakdown Voltage

8.89 V

Max Breakdown Voltage

9.83 V

Min Breakdown Voltage

8.89 V

Height

2.62 mm

Length

8.13 mm

Width

6.22 mm

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

Lead Free

Lead Free