Vishay P6KE82A-E3/73

Mount

Through Hole

Number of Pins

2

Breakdown Voltage / V

7.79 V

Case/Package

DO-15

Number of Elements

1

Reverse Stand-off Voltage

7.02 V

RoHS

Compliant

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

175 °C

Min Operating Temperature

-55 °C

Composition

Zener

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

600 W

Operating Supply Voltage

The voltage level by which an electrical system is designated and to which certain operating characteristics of the system are related.

7.02 V

Polarity

Unidirectional

Leakage Current

1 µA

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Power Line Protection

During fault, the only circuit breaker closest to the fault point should be tripped. The operating time of relay associated with protection of line should be as minimum as possible in order to prevent unnecessary tripping of circuit breakers associated with other healthy parts of power system.

No

Max Reverse Leakage Current

1 µA

Clamping Voltage

12.1 V

Peak Pulse Current

The peak pulse power rating of a TVS diode is defined as the instantaneous power dissipated by a device for a given pulse condition, and is a measure of the power that is dissipated in the TVS junction during a given transient event.

5.3 A

Max Surge Current

Surge current is a peak non repetitive current. Maximum (peak or surge) forward current = IFSM or if(surge), the maximum peak amount of current the diode is able to conduct in forward bias mode.

100 A

Peak Pulse Power

600 W

Direction

Unidirectional

Test Current

1 mA

Reverse Breakdown Voltage

7.79 V

Number of Unidirectional Channels

1

Min Breakdown Voltage

7.79 V

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No