UnitedSiC UJ3C120080K3S

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Mfr

UnitedSiC

Package

Tube

Product Status

Not For New Designs

Current - Continuous Drain (Id) @ 25℃

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V

Power Dissipation (Max)

254.2W (Tc)

Base Product Number

UJ3C120080

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

22 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Qualification

AEC-Q101

Pd - Power Dissipation

254.2 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 175 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

Through Hole

Channel Mode

Enhancement

Manufacturer

UnitedSiC

Brand

UnitedSiC

Qg - Gate Charge

51 nC

Tradename

SiC FET

Rds On - Drain-Source Resistance

100 mOhms

RoHS

Details

Typical Turn-Off Delay Time

61 ns

Id - Continuous Drain Current

33 A

Series

-

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 175°C (TJ)

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Subcategory

MOSFETs

Configuration

Single

Number of Channels

1 Channel

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

100mOhm @ 20A, 12V

Vgs(th) (Max) @ Id

6V @ 10mA

Input Capacitance (Ciss) (Max) @ Vds

1500 pF @ 100 V

Gate Charge (Qg) (Max) @ Vgs

51 nC @ 15 V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

14 ns

Drain to Source Voltage (Vdss)

1200 V

Vgs (Max)

±25V

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

FET Feature

-

Product Category

a particular group of related products.

MOSFET