UnitedSiC UF3SC120040B7S

Mounting Type

Surface Mount

Package / Case

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Supplier Device Package

D2PAK-7

Mfr

UnitedSiC

Product Status

Active

Current - Continuous Drain (Id) @ 25℃

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V

Power Dissipation (Max)

214W (Tc)

Vds - Drain-Source Breakdown Voltage

1.2 kV

Moisture Sensitive

Yes

Typical Turn-On Delay Time

37 ns

Vgs th - Gate-Source Threshold Voltage

6 V

Pd - Power Dissipation

214 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 175 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Unit Weight

0.164906 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

800

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

UnitedSiC

Brand

UnitedSiC

Qg - Gate Charge

43 nC

Tradename

SiC FET

Rds On - Drain-Source Resistance

35 mOhms

RoHS

Details

Typical Turn-Off Delay Time

47 ns

Id - Continuous Drain Current

47 A

Series

-

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 175°C (TJ)

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Cut Tape

Type

SiC FET

Subcategory

MOSFETs

Configuration

Single

Number of Channels

1 Channel

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

45mOhm @ 35A, 12V

Vgs(th) (Max) @ Id

6V @ 10mA

Input Capacitance (Ciss) (Max) @ Vds

1500 pF @ 100 V

Gate Charge (Qg) (Max) @ Vgs

43 nC @ 12 V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

12 ns, 13 ns

Drain to Source Voltage (Vdss)

1200 V

Vgs (Max)

±25V

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

FET Feature

-

Product

SiC FET

Product Category

a particular group of related products.

MOSFET