UnitedSiC UF3C120400B7S

Package / Case

1206 (3216 Metric)

Mounting Type

Surface Mount

Supplier Device Package

1206

Package

Tape & Reel (TR)

Base Product Number

RS73G2BRT

Mfr

KOA Speer Electronics, Inc.

Product Status

Active

Current - Continuous Drain (Id) @ 25℃

7.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V

Power Dissipation (Max)

100W (Tc)

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

6 V

Pd - Power Dissipation

100 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 175 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

22.5 nC

Rds On - Drain-Source Resistance

400 mOhms

Id - Continuous Drain Current

5.9 A

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 155°C

Series

RS73-RT

Size / Dimension

0.126 L x 0.063 W (3.20mm x 1.60mm)

Tolerance

±0.25%

Number of Terminations

2

Temperature Coefficient

The resistance-change factor per degree Celsius of temperature change is called the temperature coefficient of resistance. This factor is represented by the Greek lower-case letter “alpha” (α). A positive coefficient for a material means that its resistance increases with an increase in temperature.

±50ppm/°C

Resistance

78.7 kOhms

Composition

Thick Film

Power (Watts)

0.333W, 1/3W

Technology

SiCFET (Silicon Carbide)

Failure Rate

the frequency with which an engineered system or component fails, expressed in failures per unit of time. It is usually denoted by the Greek letter λ (lambda) and is often used in reliability engineering.

-

Number of Channels

1 Channel

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

515mOhm @ 5A, 12V

Vgs(th) (Max) @ Id

6V @ 10mA

Input Capacitance (Ciss) (Max) @ Vds

739 pF @ 800 V

Gate Charge (Qg) (Max) @ Vgs

22.5 nC @ 15 V

Drain to Source Voltage (Vdss)

1200 V

Vgs (Max)

±25V

FET Feature

-

Features

Automotive AEC-Q200

Height Seated (Max)

0.028 (0.70mm)

Ratings

AEC-Q200