TT Electronics IRF150

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

150 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

Through Hole

Channel Mode

Enhancement

Qg - Gate Charge

125 nC

Rds On - Drain-Source Resistance

55 mOhms

Id - Continuous Drain Current

38 A

Technology

Si

Number of Channels

1 Channel