CFH800

TriQuint CFH800

Part No:

CFH800

Manufacturer:

TriQuint

Datasheet:

-

Package:

-

AINNX NO:

42513425-CFH800

Description:

RF JFET Transistors GaAs LN Transisto

Products specifications
  • Mount
    Surface Mount
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON
  • Degree of protection (IP)
    IP67
  • RoHS
    Compliant
  • Package Description
    SMALL OUTLINE, R-PDSO-G4
  • Package Style
    SMALL OUTLINE
  • Package Body Material
    PLASTIC/EPOXY
  • Reflow Temperature-Max (s)
    30
  • Rohs Code
    Yes
  • Manufacturer Part Number
    CFH800
  • Package Shape
    RECTANGULAR
  • Manufacturer
    Qorvo
  • Number of Elements
    1
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    QORVO INC
  • Risk Rank
    5.32
  • Drain Current-Max (ID)
    0.16 A
  • ECCN Code
    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -65 °C
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOW NOISE
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    350 mW
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    unknown
  • Frequency
    1.8 GHz
  • JESD-30 Code
    R-PDSO-G4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    DEPLETION MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Drain to Source Voltage (Vdss)
    5.5 V
  • Polarity/Channel Type
    N-CHANNEL
  • Continuous Drain Current (ID)
    140 mA
  • Gate to Source Voltage (Vgs)
    -2 V
  • Gain
    17 dB
  • DS Breakdown Voltage-Min
    5.5 V
  • FET Technology
    HIGH ELECTRON MOBILITY
  • Highest Frequency Band
    S BAND
  • Power Gain-Min (Gp)
    15 dB
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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