SSM6N7002KFU,LF

Toshiba Semiconductor and Storage SSM6N7002KFU,LF

Part No:

SSM6N7002KFU,LF

Datasheet:

SSM6N7002KFU

Package:

6-TSSOP, SC-88, SOT-363

ROHS:

AINNX NO:

6380320-SSM6N7002KFU,LF

Description:

MOSFET 2N-CH 60V 0.3A

Products specifications
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Transistor Element Material
    SILICON
  • Number of Elements
    2
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2015
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    285mW
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reference Standard
    AEC-Q101
  • JESD-30 Code
    R-PDSO-G6
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power - Max
    285mW
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.5 Ω @ 100mA, 10V
  • Vgs(th) (Max) @ Id
    2.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    40pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    0.6nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    60V
  • Continuous Drain Current (ID)
    300mA
  • Drain Current-Max (Abs) (ID)
    0.3A
  • Drain-source On Resistance-Max
    1.75Ohm
  • DS Breakdown Voltage-Min
    60V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Standard
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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