SSM6N7002BFU,LF

Toshiba Semiconductor and Storage SSM6N7002BFU,LF

Part No:

SSM6N7002BFU,LF

Datasheet:

SSM6N7002BFU

Package:

6-TSSOP, SC-88, SOT-363

ROHS:

AINNX NO:

6825832-SSM6N7002BFU,LF

Description:

MOSFET 60V VDSS 20V VGSS 200mA ID 150mW

Products specifications
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Transistor Element Material
    SILICON
  • Number of Elements
    2
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2009
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    300mW
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reach Compliance Code
    unknown
  • Base Part Number
    SSM6N7002
  • JESD-30 Code
    R-PDSO-G6
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    150mW
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.1 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    3.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    17pF @ 25V
  • Drain to Source Voltage (Vdss)
    60V
  • Continuous Drain Current (ID)
    200mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.2A
  • Drain to Source Breakdown Voltage
    60V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
0 Similar Products Remaining
Documents & Media Download datasheets and manufacturer documentation for Toshiba Semiconductor and Storage SSM6N7002BFU,LF.