SSM6N17FU(TE85L,F)

Toshiba Semiconductor and Storage SSM6N17FU(TE85L,F)

Part No:

SSM6N17FU(TE85L,F)

Package:

6-TSSOP, SC-88, SOT-363

ROHS:

AINNX NO:

6378563-SSM6N17FU(TE85L,F)

Description:

MOSFET, NN CH, 0.1A, 50V, SC70

Products specifications
  • Factory Lead Time
    12 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Silver, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Current - Continuous Drain (Id) @ 25℃
    100mA Ta
  • Number of Elements
    2
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    40 ns
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2007
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    200mW
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Dual
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    200mW
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    100 ns
  • Power - Max
    200mW Ta
  • FET Type
    2 N-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    20 Ω @ 10mA, 4V
  • Vgs(th) (Max) @ Id
    1.5V @ 1μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7pF @ 3V
  • Continuous Drain Current (ID)
    100mA
  • Threshold Voltage
    1.5V
  • Gate to Source Voltage (Vgs)
    7V
  • Drain Current-Max (Abs) (ID)
    0.1A
  • Dual Supply Voltage
    50V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Standard
  • Nominal Vgs
    1.5 V
  • REACH SVHC
    No SVHC
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
0 Similar Products Remaining
Documents & Media Download datasheets and manufacturer documentation for Toshiba Semiconductor and Storage SSM6N17FU(TE85L,F).