SSM5P15FU,LF

Toshiba Semiconductor and Storage SSM5P15FU,LF

Part No:

SSM5P15FU,LF

Datasheet:

-

Package:

5-TSSOP, SC-70-5, SOT-353

AINNX NO:

28815021-SSM5P15FU,LF

Description:

PB-F SMALL LOW ON RESISTANCE MOS

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package
    USV
  • Mfr
    Toshiba Semiconductor and Storage
  • Package
    Tape & Reel (TR)
  • Product Status
    Active
  • Current - Continuous Drain (Id) @ 25℃
    100mA (Ta)
  • Vds - Drain-Source Breakdown Voltage
    30 V
  • Typical Turn-On Delay Time
    65 ns
  • Vgs th - Gate-Source Threshold Voltage
    1.7 V
  • Pd - Power Dissipation
    200 mW
  • Transistor Polarity
    P-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Vgs - Gate-Source Voltage
    - 20 V, + 20 V
  • Unit Weight
    0.000212 oz
  • Factory Pack QuantityFactory Pack Quantity
    3000
  • Mounting Styles
    SMD/SMT
  • Forward Transconductance - Min
    20 mS
  • Channel Mode
    Enhancement
  • Manufacturer
    Toshiba
  • Brand
    Toshiba
  • Tradename
    MOSVI
  • Rds On - Drain-Source Resistance
    12 Ohms
  • RoHS
    Details
  • Typical Turn-Off Delay Time
    175 ns
  • Id - Continuous Drain Current
    100 mA
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape
  • Subcategory
    MOSFETs
  • Technology
    Si
  • Configuration
    Dual
  • Number of Channels
    2 Channel
  • Power - Max
    200mW (Ta)
  • FET Type
    2 P-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    12Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id
    1.7V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    9.1pF @ 3V
  • Gate Charge (Qg) (Max) @ Vgs
    -
  • Drain to Source Voltage (Vdss)
    30V
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    MOSFET
  • FET Feature
    Standard
  • Product Category

    a particular group of related products.

    MOSFET
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