RN1402,LF

Toshiba Semiconductor and Storage RN1402,LF

Part No:

RN1402,LF

Package:

TO-236-3, SC-59, SOT-23-3

ROHS:

AINNX NO:

7837075-RN1402,LF

Description:

Trans Digital BJT NPN 50V 100mA 3-Pin S-Mini

Products specifications
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Supplier Device Package
    S-Mini
  • Collector-Emitter Breakdown Voltage
    50V
  • Current-Collector (Ic) (Max)
    100mA
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2014
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    200mW
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power - Max
    200mW
  • Transistor Type
    NPN - Pre-Biased
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 10mA 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250μA, 5mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    250MHz
  • Resistor - Base (R1)
    10 kOhms
  • Resistor - Emitter Base (R2)
    10 kOhms
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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