CUS520,H3F

Toshiba Semiconductor and Storage CUS520,H3F

Part No:

CUS520,H3F

Datasheet:

-

Package:

SC-76, SOD-323

ROHS:

AINNX NO:

5827755-CUS520,H3F

Description:

DIODE SCHOTTKY 30V 200MA

Products specifications
  • Factory Lead Time
    12 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Silver, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-76, SOD-323
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Number of Elements
    1
  • Power Dissipation (Max)
    0.15W
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2014
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    100°C
  • Min Operating Temperature
    -40°C
  • Capacitance
    17pF
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reach Compliance Code
    unknown
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    5μA @ 30V
  • Voltage - Forward (Vf) (Max) @ If
    280mV @ 10mA
  • Forward Current

    Current which flows upon application of forward voltage.

    200mA
  • Operating Temperature - Junction
    125°C Max
  • Max Reverse Voltage (DC)
    30V
  • Average Rectified Current

    Mainly used to characterize alternating voltage and current. It can be computed by averaging the absolute value of a waveform over one full period of the waveform.

    200mA
  • Peak Reverse Current

    The maximum voltage that a diode can withstand in the reverse direction without breaking down or avalanching.If this voltage is exceeded the diode may be destroyed. Diodes must have a peak inverse voltage rating that is higher than the maximum voltage that will be applied to them in a given application.

    5μA
  • Max Repetitive Reverse Voltage (Vrrm)
    30V
  • Capacitance @ Vr, F
    17pF @ 0V 1MHz
  • Peak Non-Repetitive Surge Current
    1A
  • Reverse Voltage

    the voltage drop across the diode if the voltage at the cathode is more positive than the voltage at the anode

    30V
  • Max Forward Surge Current (Ifsm)
    1A
  • Max Junction Temperature (Tj)
    125°C
  • Height
    1.15mm
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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