2SC5084-O(TE85L,F)

Toshiba Semiconductor and Storage 2SC5084-O(TE85L,F)

Part No:

2SC5084-O(TE85L,F)

Datasheet:

-

Package:

TO-236-3, SC-59, SOT-23-3

ROHS:

AINNX NO:

6083979-2SC5084-O(TE85L,F)

Description:

Bipolar Transistors - BJT Radio-Freq Bipolar 80mA 150mW 12V

Products specifications
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Transistor Element Material
    SILICON
  • Collector-Emitter Breakdown Voltage
    12V
  • Number of Elements
    1
  • hFEMin
    80
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    125°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape (CT)
  • Published
    2014
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOW NOISE
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    150mW
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PDSO-G3
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power - Max
    150mW
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product

    The gain–bandwidth product (designated as GBWP, GBW, GBP, or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.

    7 GHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    12V
  • Max Collector Current
    80mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 20mA 10V
  • Gain
    11dB
  • Transition Frequency
    7000MHz
  • Max Breakdown Voltage
    12V
  • Collector Base Voltage (VCBO)
    20V
  • Emitter Base Voltage (VEBO)
    3V
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY B
  • Collector-Base Capacitance-Max
    1.15pF
  • Noise Figure (dB Typ @ f)
    1.1dB @ 1GHz
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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