DF2S24FS(TH3,T)

Toshiba DF2S24FS(TH3,T)

Part No:

DF2S24FS(TH3,T)

Manufacturer:

Toshiba

Datasheet:

-

Package:

-

AINNX NO:

23922110-DF2S24FS(TH3,T)

Description:

Products specifications
  • Mount
    Surface Mount
  • Number of Pins
    2
  • Reverse Stand-off Voltage
    19 V
  • RoHS
    Compliant
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Composition
    Zener
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    150 mW
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Line Protection

    During fault, the only circuit breaker closest to the fault point should be tripped. The operating time of relay associated with protection of line should be as minimum as possible in order to prevent unnecessary tripping of circuit breakers associated with other healthy parts of power system.

    No
  • Max Reverse Leakage Current
    500 nA
  • Zener Voltage
    24 V
  • Number of Unidirectional Channels
    1
  • Min Breakdown Voltage
    22.8 V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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