Toshiba 1SS250(T5L,F,T)

Mount

Surface Mount

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

YES

Number of Pins

3

Diode Element Material

SILICON

Number of Terminals

3

ECCN (US)

EAR99

Maximum DC Reverse Voltage (V)

200

Peak Reverse Repetitive Voltage (V)

250

Maximum Continuous Forward Current (A)

0.1

Peak Non-Repetitive Surge Current (A)

2

Peak Forward Voltage (V)

1.2

Peak Reverse Current (uA)

1

Maximum Power Dissipation (mW)

150

Peak Reverse Recovery Time (ns)

60

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

125

AEC Qualified

No

Standard Package Name

S-MINI

Supplier Package

S-Mini

Military

No

Mounting

Surface Mount

Package Height

1.1

Package Length

2.9

Package Width

1.5

PCB changed

3

Lead Shape

Gull-wing

RoHS

Compliant

Package Description

SC-59, TO-236MOD, 3 PIN

Package Style

SMALL OUTLINE

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

NOT SPECIFIED

Operating Temperature-Max

125 °C

Rohs Code

Yes

Manufacturer Part Number

1SS250(T5L,F,T)

Power Dissipation (Max)

0.15 W

Package Shape

RECTANGULAR

Manufacturer

Toshiba America Electronic Components

Number of Elements

1

Part Life Cycle Code

Active

Ihs Manufacturer

TOSHIBA CORP

Risk Rank

5.69

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape and Reel

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Type

Switching Diode

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

125 °C

Min Operating Temperature

-55 °C

Terminal Position

DUAL

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Pin Count

a count of all of the component leads (or pins)

3

JESD-30 Code

R-PDSO-G3

Configuration

Single

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Diode Type

RECTIFIER DIODE

Forward Current

Current which flows upon application of forward voltage.

100 mA

Max Reverse Leakage Current

1 µA

Max Surge Current

Surge current is a peak non repetitive current. Maximum (peak or surge) forward current = IFSM or if(surge), the maximum peak amount of current the diode is able to conduct in forward bias mode.

2 A

Output Current-Max

0.1 A

Forward Voltage

the amount of voltage needed to get current to flow across a diode.

1.2 V

Max Reverse Voltage (DC)

200 V

Average Rectified Current

Mainly used to characterize alternating voltage and current. It can be computed by averaging the absolute value of a waveform over one full period of the waveform.

100 mA

Reverse Recovery Time

60 ns

Peak Reverse Current

The maximum voltage that a diode can withstand in the reverse direction without breaking down or avalanching.If this voltage is exceeded the diode may be destroyed. Diodes must have a peak inverse voltage rating that is higher than the maximum voltage that will be applied to them in a given application.

1 µA

Max Repetitive Reverse Voltage (Vrrm)

250 V

Rep Pk Reverse Voltage-Max

250 V

Peak Non-Repetitive Surge Current

2 A

Reverse Voltage

the voltage drop across the diode if the voltage at the cathode is more positive than the voltage at the anode

250 V

Recovery Time

6 ns

Reverse Recovery Time-Max

0.06 µs

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

RoHS Compliant

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No