VP1008B

Temic Semiconductors VP1008B

Part No:

VP1008B

Package:

-

AINNX NO:

68722598-VP1008B

Description:

Description: Power Field-Effect Transistor, 0.79A I(D), 100V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD,

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    TEMIC SEMICONDUCTORS
  • Drain Current-Max (ID)
    0.79 A
  • Package Body Material
    METAL
  • Package Shape
    ROUND
  • Package Style
    CYLINDRICAL
  • Type of cable accessories
    cable chain
  • Bending radius
    150mm
  • Version
    frames openable from inner radius
  • External height
    50mm
  • External width
    141.5mm
  • Internal height
    35mm
  • Internal width
    125mm
  • ECCN Code
    EAR99
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.29.00.95
  • Terminal Position
    BOTTOM
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    WIRE
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    O-MBCY-W3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    P-CHANNEL
  • JEDEC-95 Code
    TO-205AD
  • Drain-source On Resistance-Max
    5 Ω
  • Pulsed Drain Current-Max (IDM)
    3 A
  • DS Breakdown Voltage-Min
    100 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation Ambient-Max
    6.25 W
  • Length
    1040mm
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