MRF275G

TE Connectivity MRF275G

Part No:

MRF275G

Manufacturer:

TE Connectivity

Package:

-

AINNX NO:

68719884-MRF275G

Description:

2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    2
  • Type of capacitor
    ceramic
  • Kind of capacitor
    MLCC
  • Mounting
    SMD
  • Case - inch
    0201
  • Case - mm
    0603
  • Capacitors series
    GCQ
  • Mounting Style
    Through hole
  • Capacitance Tolerance
    ±10%
  • Voltage Rating

    The voltage rating of a cable is the highest voltage that may be continuously applied to a completed cable construction in compliance with the relevant cable standard or specification.

    50V
  • Gross Weight
    0.11
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    TE CONNECTIVITY LTD
  • Manufacturer Package Code
    CASE 375-04
  • Drain Current-Max (ID)
    26 A
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • ECCN Code
    EAR99
  • Type
    MLCC
  • Capacitance
    1.8pF
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count

    a count of all of the component leads (or pins)

    4
  • JESD-30 Code
    R-CDFM-F4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Lead Pitch
    5.08 mm
  • Dielectric
    NP0
  • Configuration
    COMMON SOURCE, 2 ELEMENTS
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    65 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY BAND
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