TSM9933DCS RLG

Taiwan Semiconductor Corporation TSM9933DCS RLG

Part No:

TSM9933DCS RLG

Datasheet:

TSM9933DCS

Package:

8-SOIC (0.154, 3.90mm Width)

ROHS:

AINNX NO:

6378410-TSM9933DCS RLG

Description:

MOSFET 2 P-CH 20V 4.7A 8SOP

Products specifications
  • Factory Lead Time
    28 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Transistor Element Material
    SILICON
  • Current - Continuous Drain (Id) @ 25℃
    4.7A Tc
  • Number of Elements
    2
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Digi-Reel®
  • Published
    2015
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    8
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • JESD-30 Code
    R-PDSO-G8
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power - Max
    2W
  • FET Type
    2 P-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    60m Ω @ 4.7A, 4.5V
  • Vgs(th) (Max) @ Id
    1.4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    640pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    8.5nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Drain Current-Max (Abs) (ID)
    4.7A
  • Drain-source On Resistance-Max
    0.06Ohm
  • Pulsed Drain Current-Max (IDM)
    20A
  • DS Breakdown Voltage-Min
    20V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Standard
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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