Taiwan Semiconductor Corporation TSM056NH04LCV RGG

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

8-PDFN (3.1x3.1)

Mfr

Taiwan Semiconductor Corporation

Product Status

Active

Current - Continuous Drain (Id) @ 25℃

16A (Ta), 54A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

34W (Tc)

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

8.9 ns

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

34 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Vgs - Gate-Source Voltage

- 16 V, + 16 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

57 S

Channel Mode

Enhancement

Part # Aliases

TSM056NH04LCV

Manufacturer

Taiwan Semiconductor

Brand

Taiwan Semiconductor

Qg - Gate Charge

16 nC

Tradename

PerFET

RoHS

Details

Typical Turn-Off Delay Time

28 ns

Id - Continuous Drain Current

54 A

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

MouseReel

Subcategory

MOSFETs

Number of Channels

1 Channel

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

5.6mOhm @ 27A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2076 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs

33 nC @ 10 V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

48 ns

Drain to Source Voltage (Vdss)

40 V

Vgs (Max)

±16V

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

FET Feature

-

Product Category

a particular group of related products.

MOSFET