Taiwan Semiconductor TSM5055DCR RLG

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

8-PDFN (5x6)

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

30 V

Id - Continuous Drain Current

38 A, 107 A

Rds On - Drain-Source Resistance

8.8 mOhms, 2.7 mOhms

Vgs - Gate-Source Voltage

- 20 V, - 20 V, + 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

1.2 V

Qg - Gate Charge

9.3 nC, 49 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Pd - Power Dissipation

30 W, 69 W

Channel Mode

Enhancement

Forward Transconductance - Min

27 S, 47 S

Moisture Sensitive

Yes

Factory Pack QuantityFactory Pack Quantity

2500

Typical Turn-Off Delay Time

8.2 ns, 34 ns

Typical Turn-On Delay Time

4.8 ns, 11 ns

Part # Aliases

TSM5055DCR

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

TSM5055

Current - Continuous Drain (Id) @ 25℃

10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)

Mfr

Taiwan Semiconductor Corporation

Product Status

Active

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Reel

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

Series

-

Configuration

Dual

Number of Channels

2 Channel

Power - Max

2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)

Rds On (Max) @ Id, Vgs

11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

555pF @ 15V, 2550pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

9.3nC @ 10V, 49nC @ 10V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

65 ns, 79 ns

Drain to Source Voltage (Vdss)

30V

Transistor Type

Asymmetric Dual N-Channel Power MOSFET

FET Feature

-