Taiwan Semiconductor TSM2N7002AKCU RFG

Package / Case

SOT-323-3

Mounting Type

Surface Mount

Supplier Device Package

SOT-323

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

60 V

Id - Continuous Drain Current

240 mA

Rds On - Drain-Source Resistance

2.5 Ohms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Qg - Gate Charge

680 pC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

6000

Typical Turn-Off Delay Time

7.98 ns

Typical Turn-On Delay Time

2.72 ns

Part # Aliases

TSM2N7002AKCU

Package

Cut Tape (CT);Digi-Reel®;Tube;

Current - Continuous Drain (Id) @ 25℃

240mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mfr

Taiwan Semiconductor Corporation

Power Dissipation (Max)

298mW (Ta)

Product Status

Active

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

MouseReel

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

Series

-

Configuration

Single

Number of Channels

1 Channel

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

2.5Ohm @ 240mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds

30 pF @ 30 V

Gate Charge (Qg) (Max) @ Vgs

0.68 nC @ 4.5 V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

2 ns

Drain to Source Voltage (Vdss)

60 V

Vgs (Max)

±20V

FET Feature

-