TSM060NB06LCZ C0G

Taiwan Semiconductor TSM060NB06LCZ C0G

Part No:

TSM060NB06LCZ C0G

Datasheet:

-

Package:

TO-220-3

AINNX NO:

31664128-TSM060NB06LCZ C0G

Description:

MOSFET 60V, 111A, Single N-Channel Power MOSFET

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Supplier Device Package
    TO-220
  • RoHS
    Details
  • Factory Pack QuantityFactory Pack Quantity
    4000
  • Part # Aliases
    TSM060NB06LCZ
  • Package
    Tube
  • Base Product Number
    TSM060
  • Current - Continuous Drain (Id) @ 25℃
    13A (Ta), 111A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Mfr
    Taiwan Semiconductor Corporation
  • Power Dissipation (Max)
    2W (Ta), 156W (Tc)
  • Product Status
    Active
  • Series
    TSM060NB06LCZ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Technology
    MOSFET (Metal Oxide)
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    6mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds
    6273 pF @ 30 V
  • Gate Charge (Qg) (Max) @ Vgs
    107 nC @ 10 V
  • Drain to Source Voltage (Vdss)
    60 V
  • Vgs (Max)
    ±20V
  • FET Feature
    -
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