Taiwan Semiconductor TSM043NB04CZ C0G

Package / Case

TO-220-3

RoHS

Details

Mounting Styles

Through Hole

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

40 V

Id - Continuous Drain Current

124 A

Rds On - Drain-Source Resistance

4.3 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

74 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Pd - Power Dissipation

2 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

4000

Typical Turn-Off Delay Time

45 ns

Typical Turn-On Delay Time

17 ns

Part # Aliases

TSM043NB04CZ

Unit Weight

0.068784 oz

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Type

N-Channel Power MOSFET

Configuration

Single

Number of Channels

1 Channel

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

74 ns

Transistor Type

1N-Channel

Product

MOSFET

Height

4.44 mm

Length

15.37 mm

Width

10.16 mm