STP22NM60

STMicroelectronics STP22NM60

Part No:

STP22NM60

Manufacturer:

STMicroelectronics

Package:

-

AINNX NO:

68724312-STP22NM60

Description:

22A, 600V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Type of connector
    pin strips
  • Connector
    socket
  • Kind of connector
    female
  • Spatial orientation
    straight
  • Contacts pitch
    2.54mm
  • Electrical mounting
    THT
  • Connector pinout layout
    2x41
  • Row pitch
    2.54mm
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    STMICROELECTRONICS
  • Part Package Code
    TO-220AB
  • Package Description
    FLANGE MOUNT, R-PSFM-T3
  • Drain Current-Max (ID)
    22 A
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • JESD-609 Code
    e3
  • Pbfree Code
    Yes
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Reach Compliance Code
    not_compliant
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-220AB
  • Drain-source On Resistance-Max
    0.25 Ω
  • Pulsed Drain Current-Max (IDM)
    80 A
  • DS Breakdown Voltage-Min
    600 V
  • Avalanche Energy Rating (Eas)
    650 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    192 W
  • Profile
    beryllium copper
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