STGWT40H65DFB

STMicroelectronics STGWT40H65DFB

Part No:

STGWT40H65DFB

Manufacturer:

STMicroelectronics

Datasheet:

STGW(T)40H65DFB

Package:

TO-3P-3, SC-65-3

ROHS:

AINNX NO:

5836731-STGWT40H65DFB

Description:

IGBT 650V 80A 283W TO3P-3L

Products specifications
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    32 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Number of Pins
    3
  • Weight
    6.756003g
  • Collector-Emitter Breakdown Voltage
    650V
  • Test Conditions
    400V, 40A, 5 Ω, 15V
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~175°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    283W
  • Base Part Number
    STGWT40
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Input Type
    Standard
  • Power - Max
    283W
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    650V
  • Max Collector Current
    80A
  • Reverse Recovery Time
    62 ns
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 40A
  • IGBT Type
    Trench Field Stop
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    210nC
  • Current - Collector Pulsed (Icm)
    160A
  • Td (on/off) @ 25°C
    40ns/142ns
  • Switching Energy
    498μJ (on), 363μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Height
    20.1mm
  • Length
    15.8mm
  • Width
    5mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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