STGWA40M120DF3

STMicroelectronics STGWA40M120DF3

Part No:

STGWA40M120DF3

Manufacturer:

STMicroelectronics

Package:

TO-247-3

ROHS:

AINNX NO:

5835187-STGWA40M120DF3

Description:

STMICROELECTRONICS STGWA40M120DF3 IGBT Single Transistor, 80 A, 1.85 V, 468 W, 1.2 kV, TO-247, 3 Pins

Products specifications
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    30 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    38.000013g
  • Collector-Emitter Breakdown Voltage
    1.2kV
  • Test Conditions
    600V, 40A, 10 Ω, 15V
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~175°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    468W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STGWA40
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Input Type
    Standard
  • Power - Max
    468W
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    80A
  • Reverse Recovery Time
    355 ns
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 40A
  • IGBT Type
    Trench Field Stop
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    125nC
  • Current - Collector Pulsed (Icm)
    160A
  • Td (on/off) @ 25°C
    35ns/140ns
  • Switching Energy
    1.03mJ (on), 480μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    7V
  • REACH SVHC
    No SVHC
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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