STGWA30M65DF2AG

STMicroelectronics STGWA30M65DF2AG

Part No:

STGWA30M65DF2AG

Manufacturer:

STMicroelectronics

Package:

TO-247-3

AINNX NO:

69807319-STGWA30M65DF2AG

Description:

IGBTs Automotive-grade trench gate field-stop 650 V

Products specifications
  • Package / Case
    TO-247-3
  • RoHS
    RoHS Compliant
  • Mounting Styles
    Through Hole
  • Collector- Emitter Voltage VCEO Max
    650 V
  • Collector-Emitter Saturation Voltage
    2.02 V
  • Maximum Gate Emitter Voltage
    20 V
  • Continuous Collector Current at 25 C
    87 A
  • Pd - Power Dissipation
    441 W
  • Minimum Operating Temperature
    - 55 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Qualification
    AEC-Q101
  • Continuous Collector Current Ic Max
    57 A
  • Gate-Emitter Leakage Current
    250 nA
  • Factory Pack Quantity
    30
  • Unit Weight
    0.215171 oz
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Configuration
    Single
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