BU508AW

STMicroelectronics BU508AW

Part No:

BU508AW

Manufacturer:

STMicroelectronics

Datasheet:

BU508AW

Package:

TO-247-3

ROHS:

AINNX NO:

6274972-BU508AW

Description:

BU508AW Series NPN 700 V 8 A High Voltage Power Transistor - TO-247

Products specifications
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Collector-Emitter Breakdown Voltage
    700V
  • Number of Elements
    1
  • hFEMin
    10
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • JESD-609 Code
    e3
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    125W
  • Base Part Number
    BU508
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    125W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    700V
  • Max Collector Current
    8A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10 @ 100mA 5V
  • Current - Collector Cutoff (Max)
    200μA
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 1.6A, 4.5A
  • Emitter Base Voltage (VEBO)
    9V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    24.45mm
  • Length
    15.75mm
  • Width
    5.15mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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