SC22101CN

Sierra Semiconductor SC22101CN

Part No:

SC22101CN

Datasheet:

Package:

-

AINNX NO:

69216769-SC22101CN

Category:

Memory

Description:

EEPROM, 128X8, 300ns, Parallel, CMOS, PDIP18,

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    18
  • Rohs Code
    No
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    SIERRA SEMICONDUCTOR
  • Access Time-Max
    300 ns
  • Number of Words
    128 words
  • Number of Words Code
    128
  • Operating Temperature-Max
    70 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Code
    DIP
  • Package Equivalence Code
    DIP18,.3
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE
  • Supply Voltage-Nom (Vsup)
    5 V
  • JESD-609 Code
    e0
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Number of Functions
    1
  • Terminal Pitch

    The center distance from one pole to the next.

    2.54 mm
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PDIP-T18
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Supply Voltage-Max (Vsup)
    5.5 V
  • Temperature Grade

    Temperature grades represent a tire's resistance to heat and its ability to dissipate heat when tested under controlled laboratory test conditions.

    COMMERCIAL
  • Supply Voltage-Min (Vsup)
    4.5 V
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ASYNCHRONOUS
  • Supply Current-Max
    0.015 mA
  • Organization
    128X8
  • Output Characteristics
    3-STATE
  • Memory Width
    8
  • Standby Current-Max
    0.0001 A
  • Memory Density
    1024 bit
  • Parallel/Serial
    PARALLEL
  • Memory IC Type
    EEPROM
  • Programming Voltage

    A special high-voltage supply that supplies the potential and energy for altering the state of certain nonvolatile memory arrays. On some devices, the presence of VPP also acts as a program enable signal (P).

    5 V
  • Write Cycle Time-Max (tWC)
    20 ms
  • Data Polling
    YES
  • Toggle Bit
    NO
  • Command User Interface
    NO
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